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A Broadband Isolated Drive Circuit of the SiC Power Device

Release date:2023-09-19  Number of views:366   Amount of downloads:481   DOI:10.19457/j.1001-2095.dqcd24516

      Abstract: In order to realize the application requirements of SiC power devices,a novel dual edge-triggered

isolated drive circuit was proposed. The circuit have the advantages of full isolation of driving signals,strong

driving ability,wide switching frequency range with 0 Hz~500 kHz signal transmission and strong of resisting

disturbance. Firstly,the structure and working principle of the circuit,as well as the edge modulation and

demodulation technology were introduced in detail. Then,the design criteria of circuit parameters was discussed.

Finally,the correctness of the circuit theoretical analysis and parameter design was verified in a circuit experiments.


      Key words: dual edge-triggered;wide switching frequency range;drive circuit




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