Abstract：Junction temperature is a key indicator of the health status of SiC MOSFET，and real-time

monitoring of junction temperature is an important foundation for condition monitoring，health management and

lifetime prediction. The real-time monitoring of junction temperature was investigated based on the on-resistance，a static thermal parameter of medium and high-voltage SiC MOSFETs. Firstly，the correlation between on-resistance

and junction temperature was analysed. Secondly，the theoretical analysis，simulation and experimental verification

of the working principle and parameter design of the online measurement circuit of turn-on voltage drop were

carried out. Finally，the models of junction temperature，on-resistance and load current of SiC MOSFETs were

calibrated offline based on the double-pulse experiment. A BUCK converter platform was built to verify the

feasibility and applicability of the proposed junction temperature online measurement scheme under two different

working conditions.

      Key words：turn-on voltage drop；SiC MOSFET；junction temperature monitoring；temperature sensitive

electrical parameters（TSEP）

     Format Citation:田家辉，齐晓光，赵凯林,等. 基于导通电阻测量的SiC MOSFET结温在线监测方法[J].电气传动,2026,56(06):32-40. TIAN Jiahui，QI Xiaoguang，ZHAO Kailin,et al. Online monitoring method for SiC MOSFET junction temperature based on turn-on resistors measurement [J].Electric Drive,2026,56(06):32-40