Abstract：The rapid development of modern power electronics technology promotes the insulated gate bipolar

transistor（IGBT）wide range of applications in the AC motor drive，inverter，switching power supply and new

energy industry. In the application process of IGBT，due to the complex and varied circuit topology and system

conditions，the problem of gate waveform oscillation usually exists. How to understand the oscillation mechanism

and suppress methods becomes the basis of IGBT security and stability application. According to the IGBT internal

parasitic parameter structure and switching process，the IGBT gate turn-on oscillation，turn-off oscillation and shortcircuit oscillation were introduced in detail，the mathematical model of the gate oscillation process and the

oscillation of the radio frequency （RF）positive feedback oscillation （turn-off oscillation and short-circuit

oscillation）were deduced. The corrective measures of adding negative feedback or decreasing the positive

feedback gain were put forward. By improving the experiment of different oscillations，the effectiveness of the

suppression measures was verified，and the stability and reliability of IGBT application were improved.

      Key words：insulated gate bipolar transistor（IGBT）；gate oscillation mechanism；suppression methods；

positive feedback