Abstract：Based on the principle of magnetic coupling resonance technology，a bilateral LCC topology

compensation network parameter design method was adopted. Firstly，the mathematical model of the main circuit

of the bilateral LCC topology was analyzed，and the inductance ratio of the coil self-inductance and the series

compensation inductance was set. Then，by writing an M file and building a Simulink simulation platform，

according to the relationship between inductance ratio and efficiency，found the optimal efficiency point. Finally，a

all-SiC MOSFET device system experimental platform was built for verification. The experimental results show

that the efficiency of the coupling mechanism can be maintained at about 95% and the maximum efficiency of the

system is more than 92.5% in the range of full power offset by setting the appropriate inductance ratio，which

proves that the compensation network parameter design method is effective.

      Key words：magnetic coupling resonance；bilateral LCC topology；inductance ratio；SiC MOSFET device；

coupling mechanism efficiency