Abstract: Aiming at the series short-circuit phenomenon caused by device breakdown and control failure，

based on the half-bridge structure，the different series short-circuit dynamic sharing voltage characteristics of SiC

MOSFET and Si IGBT were analyzed. At the same time，the principle of series short-circuit voltage sharing was

analyzed combining with the changes of voltage and current during switching，and the voltage sharing path of the

device was marked on the output characteristic curves. Experimental results show that the external driving

parameters such as driving voltage，load current and bus voltage have different effects on the voltage sharing

characteristics of the two devices on series short-circuit. The reverse load current changes the series short-circuit

voltage sharing trend and most obviously effects the characteristics of series short-circuit. Fully understanding the

series short-circuit mechanism is critical to improve the short-circuit protection strategies.

      Key words: silicon carbide metal-oxide-semiconductor field-effect transistor（SiC MOSFET）；silicon insulated gate bipolar transistor（Si IGBT）；series short-circuit