Abstract: Silicon carbide（SiC）MOSFET has great advantages in improving efficiency and power density of

inverter for new energy vehicles，due to its advantages as high frequency，low loss and high junction temperature. For the SiC MOSFET module，it is very important to study the short-circuit protection with high current，and the driving oscillation caused by high switching speed. In order to solve these problems，the driver of SiC MOSFET module with high current was designed，which includes power supply circuit，power amplifier circuit，short circuit protection circuit，active Miller clamp circuit and temperature detection circuit. After analyzing the drive oscillation mechanism of SiC MOSFET，the finite element software was used to extract the parasitic inductance of the drive circuit，and the layout design of the drive circuit was optimized. The stray inductances of the open and closed loops were reduced to 6.50 nH and 5.09 nH. Finally，the Cree's 1 200 V/400 A CAB400M12XM3 power module was used for experiment.The rationality of driver and the reliability of short-circuit protection were verified through double pulse experiment.When the short circuit current is equal to 800A，fast short-circuit protection can be achievedwithin 1.640 μs.

      Key words: silicon carbide（SiC）MOSFET；driver；short-circuit protection；drive oscillation；double pulse

experiment