Abstract: Insulated gate bipolar transistor（IGBT）is widely used in the industry，but the IGBT junction

temperature is easily affected by changes in operating conditions and the heat dissipation environment in which it is

located. Poor heat dissipation channels will cause the IGBT module to remain in a high temperature state for a long

time and it affects the efficiency of the device. So an IGBT junction temperature estimation method based on the

thermal impedance model was proposed. Each functional layer of the IGBT module was abstracted as a thermal

resistance model，the estimated junction temperature of the IGBT under certain conditions through the modeling and simulation was obtained. Under the same working conditions，the IGBT temperature was collected through

experiments，the simulation results were verified with experiments，which prove the accuracy of IGBT junction

temperature estimation based on impedance model.

      Key words: insulated gate bipolar transistor（IGBT）；thermal resistance model；junction temperature estimation；modeling and simulation