Abstract: The failure rate of IGBT devices caused by excessively high temperature is as high as 55%.

Improving the heat dissipation efficiency of the heat sink is the basis for ensuring the safe and reliable operation of

IGBT devices. Through theoretical analysis of IGBT module water cooling and heat dissipation，a temperature rise

calculation method based on flow field-temperature field coupling was proposed，and simulation software was used to perform flow field-temperature field coupling calculation for IGBT module. After that，a temperature rise test platform was built，and the chip temperature was measured by the method of small current saturation voltage drop.Compared with the simulation results，the error is less than 5%. Finally，the radiator structure was optimized. The analysis results show that the heat generated by the IGBT module diffuses from top to bottom and from the middle to the surroundings. The maximum temperature is less than the operating limit temperature，and the heat dissipation effect of the optimized heat sink is significantly improved. The temperature rise and heat dissipation of high-power IGBT module were analyzed based on the coupled field numerical calculation method，and the fluid flow and temperature distribution were obtained. Then，the comparative analysis of temperature rise test provided a basis for the optimal design of radiator structure.

      Key words: insulated gate bipolar transistor（IGBT）；water cooling；numerical calculation；temperature

field；flow field