Abstract: SiC MOSFET devices have the characteristics of high switching frequency，low loss，and high

temperature resistance，which can significantly improve the power density and efficiency when used in wireless

charging. However，in the control of the wireless charging converter，hard turn-on and hard turn-off are easy to occur，which will generate additional switching losses. At the same time，under the influence of the electromagnetic environment and parasitic parameters，the gate stage of the switch tube is prone to accelerated aging or damage due to voltage overshoot and oscillation. Based on the above reasons，the switching characteristics，switching losses and factors affecting the reliability of the switch in the bidirectional wireless charging system were analyzed and verified by simulation. Finally，through the comparison experiment of different driving parameters at the full power and half power point of the built bidirectional wireless system prototype，the change trend of driving parameters on system transmission efficiency and gate-level waveform was obtained，which has a certain reference for the application and efficiency optimization of SiCMOSFET in bidirectional wireless charging system.

      Key words: silicon carbon MOSFET（SiC MOSFET）；wireless power transfer （WPT）；overshoot；oscillation